Low threshold voltage PMOS apparatus and method of fabricating the same

US7382024B2 · kind B2 · utility

Assignee

• Broadcom Corporation · US

Inventors

• Akira Ito · Kawasaki, JP
• Henry Chen · Irvine, US

Key dates

• Filing date: Jan 3, 2007
• Grant date: Jun 3, 2008
• Expiry date: Jan 3, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A P-type metal oxide semiconductor (PMOS) device can include an N-well that does not extend completely throughout the active region of the PMOS device. For example, the PMOS device can be fabricated using a masking step to provide an N-well having an inner perimeter and an outer perimeter. The inner perimeter of the N-well surrounds at least a portion of the active region of the PMOS device. According to an embodiment, the inner perimeter of the N-well surrounds the entire active region. The PMOS device can include a deep N-well in contact with the N-well.