Optoelectronic component having a conductive contact structure

US7382034B2 · kind B2 · utility

Assignee

• STMICROELECTRONICS, INC. · US

Inventors

• Peter Rieve · Windeck, DE
• Marcus Walder · Bad Mergentheim, DE
• Konstantin Seibel · Siegen, DE
• Jens Prima · Gehrde, DE
• Reinhard Ronneberger · Dresden, DE
• Markus Scholz · Birkenfeld, DE
• Tarek Lule · Saint-Égrève, FR

Key dates

• Filing date: May 15, 2002
• Grant date: Jun 3, 2008
• Expiry date: Nov 30, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/334

Abstract

The invention relates to an optoelectronic component for converting electromagnetic radiation into an intensity-dependent photoelectric current. The component includes one substrate which is formed especially according to CMOS technology. The substrate has an integrated semiconductor structure and an optically active thin layer structure which is situated upstream in the direction of light incidence. The structure includes a layer of a transparent conductive material and at least one layer of semiconductor material, which are arranged on an isolating layer, inside which connection means are provided for establishing a connection between the optically active thin layer structure and the integrated semiconductor structure arranged on the substrate. The aim of the invention is to develop one such optoelectronic component in such a way that the electrical connection between the layer of transparent conductive material and an electrical potential connection can be established in a technically simple manner. To this end, the layer of transparent conductive material can be connected to the potential connection arranged outside the pixel arrangement by means of an additional conductive str…