Schottky diode with low leakage current and fabrication method thereof
US7382035B2 · kind B2 · utility
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2References
8Claims
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Key dates
| Filing date | Feb 17, 2006 |
| Grant date | Jun 3, 2008 |
| Priority date | — |
| Expiry date | Jul 9, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/60
Abstract
A low leakage Schottky diode and fabrication method thereof. The Schottky diode includes a n-type semiconductor; an anode having a circular periphery formed in a region above the n-type semiconductor; and a cathode formed in a region above the n-type semiconductor and having a pattern surrounding and set apart from the outer periphery of the anode. Because there are no edges at the anode and cathode interface, leakage current is minimized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.