Magnetoresistive effect element and magnetic memory device
US7382643B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2006 |
| Grant date | Jun 3, 2008 |
| Priority date | — |
| Expiry date | Apr 25, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The magnetoresistive effect element comprises a pinned magnetic layer 16 having a multilayered synthetic antiferromagnet (SAF) structure, a nonmagnetic spacer layer 18 formed on the pinned magnetic layer 16, a free magnetic layer 20 formed on the nonmagnetic spacer layer 18 and formed of a single ferromagnetic layer, a nonmagnetic spacer layer 22 formed on the free magnetic layer 20, and a pinned magnetic layer 24 of a multilayered SAF structure formed on the nonmagnetic spacer layer 22, wherein a magnetization direction of the ferromagnetic layer 16c of the pinned magnetic layer 16, which is nearest the free magnetic layer 20, and a magnetization direction of the ferromagnetic layer 24a of the pinned magnetic layer 24, which is nearest the free magnetic layer 20, are opposite to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.