Field effect transistor including an organic semiconductor and a dielectric layer having a substantially same pattern

US7384814B2 · kind B2 · utility

Assignee

• POLYMER VISION LTD. · NL

Inventors

• Hjalmar Edzer Ayco Huitema · Belmont, US
• Bart-Hendrik Huisman · Eindhoven, NL

Key dates

• Filing date: May 13, 2004
• Grant date: Jun 10, 2008
• Expiry date: Jul 11, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K19/80

Abstract

Provided is a method of manufacturing a field effect transistor with an organic semiconductor, and particularly a device comprising a plurality of field effect transistors with an interconnect structure. Herein, use is made of three photolithographical masks for four layers. Thereto, the transistor is provided in a top-gate structure, and the organic semiconductor layer (307) and the dielectric layer (309) are structure and patterned together. The semiconductor layer (307) and the dielectric layer (309) may be removed from areas not associated with field effect transistors (300) or with crossing conductors of the first and second conductor layer (303, 305, 501).