High dielectric constant MOSFET device
US7385265B2 · kind B2 · utility
11Cited by
5References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2003 |
| Grant date | Jun 10, 2008 |
| Priority date | — |
| Expiry date | Mar 15, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has an MIS (metal-insulating film-semiconductor) structure, and a film mainly containing Al, O, and N atoms is used on a semiconductor. Alternatively, a semiconductor device has an MIS structure, and a film mainly containing Al, O, and N atoms is provided as a gate insulating film on a channel region between a source and a drain. Characteristics required of a gate insulating film of a 0.05 μm-gate-length-generation semiconductor transistor are satisfied. In particular, no fixed charge is included in the film, and impurity diffusion is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.