Removal of surface oxides by electron attachment for wafer bumping applications
US7387738B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2003 |
| Grant date | Jun 17, 2008 |
| Priority date | — |
| Expiry date | Apr 1, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
The present invention relates to a method for removing metal oxides from a substrate surface. In one particular embodiment, the method comprises: providing a substrate, a first, and a second electrode that reside within a target area; passing a gas mixture comprising a reducing gas through the target area; supplying an amount of energy to the first and/or the second electrode to generate electrons within the target area wherein at least a portion of the electrons attach to a portion of the reducing gas and form a negatively charged reducing gas; and contacting the substrate with the negatively charged reducing gas to reduce the metal oxides on the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.