Metal contact structure for solar cell and method of manufacture

US7388147B2 · kind B2 · utility

Assignee

• SUNPOWER CORPORATION · US

Inventors

• William P. Mulligan · San Jose, US
• Michael Cudzinovic · Sunnyvale, US
• Thomas Pass · San Jose, US
• David D. Smith · Dublin, US
• Richard M. Swanson · Los Altos, US

Key dates

• Filing date: Apr 10, 2003
• Grant date: Jun 17, 2008
• Expiry date: Mar 19, 2025

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547

Abstract

In a solar cell having p doped regions and n doped regions alternately formed in a surface of a semiconductor wafer in offset levels through use of masking and etching techniques, metal contacts are made to the p regions and n regions by first forming a base layer contacting the p doped regions and n doped regions which functions as an antireflection layer, and then forming a barrier layer, such as titanium tungsten or chromium, and a conductive layer such as copper over the barrier layer. Preferably the conductive layer is a plating layer and the thickness thereof can be increased by plating.