Diode with lead terminal for solar cell
US7388269B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 2005 |
| Grant date | Jun 17, 2008 |
| Priority date | — |
| Expiry date | Sep 15, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A diode such as a cell string bypass diode or a reverse-current preventive diode exhibiting excellent heat dissipativity and preferably sealed integrally in a solar cell module. An N terminal (11) consists thickness part of 0.8 mm or above, i.e. an N substrate part (12), one thin part, i.e. an N thin part (13), and a P connecting wire receiving part (24). In a state where a diode chip (31) is connected, the thicknesses of the entire lead terminals are substantially the same, the total value of the plane area of the N substrate part and the P substrate part is 200 (mm)2 or above, and the diode with a lead terminal is sealed together with the solar cell between the front surface material and the rear surface material for sealing the solar cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.