Thin film piezoelectric resonator, thin film piezoelectric device, and manufacturing method thereof
US7388318B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2003 |
| Grant date | Jun 17, 2008 |
| Priority date | — |
| Expiry date | May 25, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/588
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A thin film piezoelectric device includes a substrate (12) having via holes (22) and a piezoelectric laminated structure (14) consisting of a lower electrode (15), a piezoelectric film (16), and an upper electrode (17) formed on the substrate (12) via an insulation layer (13). A plurality of thin film piezoelectric resonators (210, 220) are formed for the via holes (22). The piezoelectric laminated structure (14) includes diaphragms (23) located to face the via holes (22) and a support area other than those. The thin film piezoelectric resonators (210, 220) are electrically connected by the lower electrode (15). When the straight line in the substrate plane passing through the centers (1, 2) of the diaphragms (23) of the thin film piezoelectric resonators (210, 220) has the length D1 of the segment passing through the support area and the distance between the centers of the diaphragms of the thin film piezoelectric resonators (210, 220) is D0,the ratio D1/D0 is 0.1 to 0.5. The via hole (22) is fabricated by the deep graving type reactive ion etching method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.