Multi-bit-per-cell flash memory device with non-bijective mapping
US7388781B2 · kind B2 · utility
185Cited by
8References
11Claims
0Family size
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Key dates
| Filing date | Oct 2, 2006 |
| Grant date | Jun 17, 2008 |
| Priority date | — |
| Expiry date | Oct 2, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5641
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
To store a plurality of input bits, the bits are mapped to a corresponding programmed state of one or more memory cells and the cell(s) is/are programmed to that corresponding programmed state. The mapping may be many-to-one or may be an “into” generalized Gray mapping. The cell(s) is/are read to provide a read state value that is transformed into a plurality of output bits, for example by maximum likelihood decoding or by mapping the read state value into a plurality of soft bits and then decoding the soft bits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.