Wafer, semiconductor device, and fabrication methods therefor
US7390696B2 · kind B2 · utility
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10References
4Claims
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Key dates
| Filing date | Nov 9, 2004 |
| Grant date | Jun 24, 2008 |
| Priority date | — |
| Expiry date | Jun 9, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
In order to fabricate a semiconductor device that can perform at its full capacity, in which (i) a single-crystal silicon integrated circuit is formed on an insulating substrate without an adhesive agent, and (ii) an active region of the single-crystal integrated circuit is not damaged by implantation of hydrogen ions, (a) the single-crystal silicon integrated circuit is formed on the insulating substrate, and (b) the single-crystal silicon integrated circuit is surrounded by an oxide (buried oxide layer made of silicon dioxide).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.