Polycrystalline silicon film containing Ni
US7390727B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 24, 2006 |
| Grant date | Jun 24, 2008 |
| Priority date | — |
| Expiry date | Dec 14, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is related to a polycrystalline silicon film containing Ni which is formed by crystallizing an amorphous silicon layer containing nickel. The present invention includes a polycrystalline silicon film wherein the polycrystalline film contains Ni atoms of which density ranges from 2×1017 to 5×1019 atoms/cm3 in average and comprises a plurality of needle-shaped silicon crystallites. In another aspect, the present invention includes a polycrystalline silicon film wherein the polycrystalline film contains Ni atoms of which density ranges from 2×1017 to 5×1019 atoms/cm3, comprises a plurality of needle-shaped silicon crystallites and is formed on an insulating substrate. Such a polysilicon film according to the present invention avoids metal contamination usually generated in a conventional method of metal induced crystallization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.