Hybrid microwave integrated circuit
US7391067B1 · kind B1 · utility
8Cited by
6References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 25, 2006 |
| Grant date | Jun 24, 2008 |
| Priority date | — |
| Expiry date | Feb 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated microwave transistor amplifier includes a AlGaN/GaN active transistor arrangement on a thinned Si 1-mil heat spreader. Elongated, plated-through vias extend from the source portions of the transistor arrangement through the spreader to a thick gold supporting layer. A matching circuit is defined on a four-mil GaAs substrate, also with a thick gold support layer. A stepped heat sink supports the matching circuit and the active transistor with surfaces coplanar. Bond wires interconnect the matching circuit with the gate or drain connections of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.