Method for manufacturing compound semiconductor epitaxial substrate
US7393412B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Nov 8, 2004 |
| Grant date | Jul 1, 2008 |
| Priority date | — |
| Expiry date | Nov 8, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a compound semiconductor epitaxial substrate with few concave defects is provided. The method for manufacturing a compound semiconductor epitaxial substrate comprises a step of epitaxially growing an InGaAs layer on an InP single crystal substrate or on an epitaxial layer lattice-matched to the InP single crystal substrate under conditions of ratio of V/: 10-100, growth temperature: 630° C.-700° C., and growth rate: 0.6 μm/h-2 μm/h.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.