Low temperature methods of etching semiconductor substrates
US7393700B2 · kind B2 · utility
1Cited by
1References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2005 |
| Grant date | Jul 1, 2008 |
| Priority date | — |
| Expiry date | Jun 17, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of etching a semiconductor substrate may include providing a first gas that is chemically reactive with respect to the semiconductor substrate, and while providing the first gas, providing a second gas different than the first gas. More particularly, a molecule of the second gas may include a hydrogen atom, and the second gas may lower a temperature at which the first gas chemically reacts with the semiconductor substrate. The mixture of the first and second gases may be provided adjacent the semiconductor substrate to etch the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.