Fabrication method of multi-wavelength semiconductor laser device
US7393710B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2005 |
| Grant date | Jul 1, 2008 |
| Priority date | — |
| Expiry date | Dec 19, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a two-wavelength semiconductor laser device, more particularly, to a fabrication method of a multi-wavelength semiconductor laser device. In this method, a substrate having an upper surface separated into at least first and second areas is provided. Then, a first dielectric mask on the substrate is formed to expose only the first area. Then, epitaxial layers for a first semiconductor laser are grown on the first area of the substrate. Then, a second dielectric mask on the substrate is formed to expose only the second area. Then, epitaxial layers for a second semiconductor laser are grown on the second area of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.