Semiconductor device including a multi-channel fin field effect transistor including protruding active portions and method of fabricating the same
US7394116B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2005 |
| Grant date | Jul 1, 2008 |
| Priority date | — |
| Expiry date | Aug 10, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6741
Abstract
In a semiconductor device, and a method of fabricating the same, the semiconductor device includes a semiconductor substrate having a cell region and a peripheral circuit region, a portion of the semiconductor substrate in the cell region and in the peripheral circuit region including an isolation region defining an active region, a portion of the active region protruding above an upper surface of the isolation region to define at least two active channels, a gate dielectric layer formed over the active region of the semiconductor substrate including the at least two protruding active channels, a gate electrode formed over the gate dielectric layer and the isolation region of the semiconductor substrate, and a source/drain region formed in the active region of the semiconductor substrate on either side of the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.