Semiconductor device having a shaped gate electrode and method of manufacturing the same
US7394120B2 · kind B2 · utility
3Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2005 |
| Grant date | Jul 1, 2008 |
| Priority date | — |
| Expiry date | Jun 7, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/608
Abstract
An MIS transistor includes a gate electrode located to intersect a device region of a semiconductor substrate isolated by a device isolation region, and source and drain regions formed in the semiconductor substrate at both sides of the gate electrode region and elevated source and drain located above the source and drain regions. A gate length of the gate electrode at a boundary between the device isolation region and the device region is longer than the gate length at a central portion of the device region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.