Substrate for forming a solid-state image pickup element, solid-state image pickup element using the same, and method of producing the same
US7394141B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Dec 20, 2005 |
| Grant date | Jul 1, 2008 |
| Priority date | — |
| Expiry date | Jun 1, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/80
Abstract
A substrate for a solid-state image pickup element, comprising: an n-type silicon substrate; and an n-type epitaxial growth layer formed on a surface of the n-type silicon substrate, wherein the substrate is configured to form a solid-state image pickup element in the n-type epitaxial growth layer, the solid-state image pickup element comprising: a photoelectric converting section; and a charge transferring section having charge transfer electrodes which transfer charges produced in the photoelectric converting section, and the n-type silicon substrate has a specific resistance of 10/1,000 Ωcm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.