Monocrystalline diamond layer and method for the production thereof

US7396408B2 · kind B2 · utility

Assignee

• University of Augsburg · DE

Inventors

• Matthias Schreck · Augsburg, DE
• Stefan Gsell · Augsburg, DE
• Bernd Stritzker · Kissing, DE

Key dates

• Filing date: May 3, 2004
• Grant date: Jul 8, 2008
• Expiry date: May 3, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0245
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

This invention relates to a method for the production of diamond films with low misorientation through the deposition of diamond on a film system, whereby the film system exhibits a substrate film made of monocrystalline silicon or silicon carbide, at least one buffer film arranged on that, and at least one metal film made of a refractory metal arranged on that, whereby the diamond is deposited on the at least one metal film.