Methods of forming semiconductor devices having a trench with beveled corners
US7396729B2 · kind B2 · utility
1Cited by
4References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2005 |
| Grant date | Jul 8, 2008 |
| Priority date | — |
| Expiry date | Mar 3, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is formed by providing a substrate. A trench is formed in the substrate. Beveled surfaces are formed at upper portions of sidewalls of the trench opposite a bottom surface of the trench, respectively. An oxide layer is formed in the trench such that the oxide layer is thicker on the beveled surfaces of the trench than on other surfaces of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.