Method of forming a semiconductor thin film
US7396744B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2006 |
| Grant date | Jul 8, 2008 |
| Priority date | — |
| Expiry date | Jul 6, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02683
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor thin film is provided, comprising: forming an insulation layer on a semiconductor substrate; etching the insulation layer to form a plurality of openings exposing the substrate at the bottom of the openings; filling the openings with a semiconductor seed layer; forming an amorphous layer on the seed layer and the insulation layer; transforming the amorphous layer to a polycrystalline layer by exposing the amorphous layer to a first laser irradiation at a first energy level; and forming a single semiconductor crystalline film by annealing the polycrystalline layer and the semiconductor seed layer with a second laser irradiation at a second energy level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.