Germanium silicon heterostructure photodetectors
US7397101B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2005 |
| Grant date | Jul 8, 2008 |
| Priority date | — |
| Expiry date | May 15, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A horizontal germanium silicon heterostructure photodetector comprising a horizontal germanium p-i-n diode disposed over a horizontal parasitic silicon p-i-n diode uses silicon contacts for electrically coupling to the germanium p-i-n through the p-type doped and n-type doped regions in the silicon p-i-n without requiring direct physical contact to germanium material. The current invention may be optically coupled to on-chip and/or off-chip optical waveguide through end-fire or evanescent coupling. In some cases, the doping of the germanium p-type doped and/or n-type doped region may be accomplished based on out-diffusion of dopants in the doped silicon material of the underlying parasitic silicon p-i-n during high temperature steps in the fabrication process such as, the germanium deposition step(s), cyclic annealing, contact annealing and/or dopant activation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.