Method for integration of three bipolar transistors in a semiconductor body, multilayer component, and semiconductor arrangement
US7397109B2 · kind B2 · utility
2Cited by
8References
6Claims
0Family size
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Key dates
| Filing date | Jul 29, 2005 |
| Grant date | Jul 8, 2008 |
| Priority date | — |
| Expiry date | Jul 29, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/641
Abstract
A method for integrating three bipolar transistors into a semiconductor body, multilayer component, and semiconductor arrangement is provided. A tendency toward thyristor-like behavior of the multilayer semiconductor arrangements with the three bipolar transistors is suppressed with the aid of a heterojunction. The high frequency characteristics and the blocking capability of the circuit of the three bipolar transistors is made more flexible, while the capability of an input signal to control an output signal is maintained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.