Patent · US Active

Vertical external cavity surface emitting laser

US7397829B2 · kind B2 · utility

5Cited by
2References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 9, 2006
Grant dateJul 8, 2008
Priority date
Expiry dateAug 9, 2026

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S5/18305
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Provided is a VECSEL capable of achieving an excellent efficiency of a SHG crystal and being manufactured in a compact size. The VECSEL includes a laser chip, an external mirror, an SHG crystal, a lens element, and a wavelength selective mirror. The laser chip generates a first wavelength light, and the external mirror is spaced from the laser chip to face the front side of the laser chip. The SHG crystal is located between the external mirror and the laser chip to double the frequency of the first wavelength light to make a second wavelength light. The lens element is located between the SHG crystal and the laser chip to allow the first wavelength light generated from the laser chip to converge at the SHG crystal, and the wavelength selective mirror is located between the SHG crystal and the lens element to transmit the first wavelength light and reflect the second wavelength light to the external mirror.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.