Method of manufacturing a thin film transistor device
US7399662B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2005 |
| Grant date | Jul 15, 2008 |
| Priority date | — |
| Expiry date | Oct 7, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/451
Abstract
A method of making a thin film transistor device, including forming and patterning a semiconductor film to form first and second semiconductor films in, respectively, low-voltage driven and high-voltage driven thin film transistor formation regions. The method also includes forming a first insulating film on the first and second semiconductor films, and forming a first gate electrode on the first insulating film in the low-voltage driven thin film transistor formation region. Additionally, a second insulating film is formed on the entire surface of the resultant structure above the substrate, and a second gate electrode is formed on the second insulating film in the high-voltage driven thin film transistor formation region. The method also includes etching the first and second insulating films, thus forming first and second gate insulating films below, respectively, the first and second gate electrodes, with the second gate insulating film being wider than the second gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.