Silicon carbide semiconductor device and method for manufacturing the same
US7399676B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2005 |
| Grant date | Jul 15, 2008 |
| Priority date | — |
| Expiry date | Sep 29, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/104
Abstract
A method for manufacturing a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate and first to third semiconductor layers; forming a trench in a cell region of the semiconductor substrate; forming a fourth semiconductor layer in the trench; forming an oxide film in the trench such that a part of the fourth semiconductor layer on a sidewall of the trench is thermally oxidized; forming a gate electrode on the oxide film in the trench; forming a first electrode electrically connecting to the third semiconductor layer; and forming a first electrode electrically connecting to the silicon carbide substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.