Glass-based SOI structures
US7399681B2 · kind B2 · utility
25Cited by
22References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 10, 2005 |
| Grant date | Jul 15, 2008 |
| Priority date | — |
| Expiry date | Jun 10, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2007
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor on glass structure includes: establishing an exfoliation layer on a semiconductor wafer; contacting the exfoliation layer of the semiconductor wafer to a glass substrate; applying pressure, temperature and voltage to the semiconductor wafer and the glass substrate, without a vacuum atmosphere, such that a bond is established therebetween via electrolysis; and applying stress such that the exfoliation layer separates from the semiconductor wafer and remains bonded to the glass substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.