Electrode, method for forming an electrode, thin-film transistor, electronic circuit, organic electroluminescent element, display, and electronic equipment
US7399989B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2004 |
| Grant date | Jul 15, 2008 |
| Priority date | — |
| Expiry date | May 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/60
Abstract
An electrode is provided that is economically produced and capable of efficiently injecting holes. Also provided are a method to form an electrode that is capable of easily manufacturing such an electrode, a highly reliable thin-film transistor, an electronic circuit using this thin-film transistor, an organic electroluminescent element, a display, and electronic equipment. A thin-film transistor is a top-gate thin-film transistor. The thin-film transistor includes a source electrode and a drain electrode that are placed separately from each other. The thin-film transistor also includes an organic semiconductor layer that is laid out between the source electrode and the drain electrode, and a gate insulating layer that is provided between the organic semiconductor layer and a gate electrode. This structure is mounted on a substrate. Each of the source electrode and the drain electrode is composed of two layers, that is, an underlying electrode layer and a surface electrode layer. The surface electrode layer includes an oxide containing at least one of Cu, Ni, Co, Ag.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.