Semiconductor device and method of manufacturing the same
US7400010B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 23, 2006 |
| Grant date | Jul 15, 2008 |
| Priority date | — |
| Expiry date | Jul 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/30
Abstract
A semiconductor device including a semiconductor substrate having trenches oriented in a predetermined direction; a gate insulating film overlaying the semiconductor substrate interposed between the trenches; and floating gate electrodes formed on the gate insulating film aligned in a predetermined direction and in a direction intersecting thereto, an element isolation insulating film filling the trenches such that an upper surface thereof is higher than an upper surface of the adjoining gate insulating film, wherein the element isolation insulating film includes a first element isolation insulator interposed between neighboring floating gate electrodes in the intersecting direction and a second element isolation insulator interposed between neighboring first element isolation insulators in the predetermined direction. The second element isolation insulator has a sidewall oriented in the predetermined direction, a height thereof from the gate insulating film upper surface being lower than a boundary between the first and the second isolation insulators.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.