Thin film resistor structure
US7400026B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2006 |
| Grant date | Jul 15, 2008 |
| Priority date | — |
| Expiry date | Oct 13, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/209
Abstract
The present invention relates to a thin film resistor formed over a semiconductor substrate. A gate structure is formed and a dielectric layer is formed over the gate structure. A via is then etched that extends through the dielectric layer so as to expose a conductive layer of the gate structure. A layer of titanium nitride is deposited and a rapid thermal anneal is performed in an oxygen ambient. The rapid thermal anneal incorporates oxygen into the titanium nitride, forming titanium oxynitride film. A layer of dielectric material is then deposited and etched-back to form a dielectric plug that fills the remaining portion of the via. The titanium oxynitride film is patterned to form a titanium oxynitride structure that is electrically coupled to the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.