Recycling charge to reduce energy consumption during mode transition in multithreshold complementary metal-oxide-semiconductor (MTCMOS) circuits
US7400175B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2007 |
| Grant date | Jul 15, 2008 |
| Priority date | — |
| Expiry date | May 30, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/0013
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a circuit includes a first circuit block connected to ground via a first sleep transistor, a virtual ground node between the first circuit block and the first sleep transistor, a second circuit block connected to a supply via a second sleep transistor, and a virtual supply node between the second circuit block and the second sleep transistor. The circuit also includes a transmission gate (TG) or a pass transistor connecting the virtual ground node to the virtual supply node to enable charge recycling between the first circuit block and the second circuit block during transitions by the circuit between active mode and sleep mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.