Pressure sensor with integrated structure
US7401521B2 · kind B2 · utility
20Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2004 |
| Grant date | Jul 22, 2008 |
| Priority date | — |
| Expiry date | Jun 9, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Pressure sensor with an integrated structure comprising a support (33, 133, 233) and a silicon die (11), which lies substantially on the same plane as the upper surface (37, 137, 237) of the support and is integrated in a seat (34, 134, 234) made in the thickness of the support. On the inside face (23) of the die (11), in contact with the fluid the pressure of which has to be measured, is a protective layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.