Method of manufacturing a semiconductor device
US7402467B1 · kind B1 · utility
75Cited by
24References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2000 |
| Grant date | Jul 22, 2008 |
| Priority date | — |
| Expiry date | Mar 24, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.