Semiconductor device and method of manufacturing the same
US7402499B2 · kind B2 · utility
5Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2006 |
| Grant date | Jul 22, 2008 |
| Priority date | — |
| Expiry date | Dec 15, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate formed with a plurality of first element isolation trenches having respective first opening widths and a plurality of second element isolation trenches having larger opening widths than the first opening widths, element isolation insulating films buried in the first element isolation trenches so that upper parts of the trenches have partial openings, respectively and buried in the second element isolation trenches respectively, and coating type oxide films formed so as to fill the openings of the first element isolation trenches, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.