Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 · kind B2 · utility
3,950Cited by
2References
43Claims
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Key dates
| Filing date | Jun 16, 2005 |
| Grant date | Jul 22, 2008 |
| Priority date | — |
| Expiry date | Nov 2, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor comprises a zinc-oxide-containing semiconductor material. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, wherein the substrate temperature is no more than 300° C. during fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.