Method of fabricating a probe having a field effect transistor channel structure
US7402736B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2005 |
| Grant date | Jul 22, 2008 |
| Priority date | — |
| Expiry date | Aug 17, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/876
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A probe of a scanning probe microscope having a sharp tip and an increased electric characteristic by fabricating a planar type of field effect transistor and manufacturing a conductive carbon nanotube on the planar type field effect transistor. To achieve this, the present invention provides a method for fabricating a probe having a field effect transistor channel structure including fabricating a field effect transistor, making preparations for growing a carbon nanotube at a top portion of a gate electrode of the field effect transistor, and generating the carbon nanotube at the top portion of the gate electrode of the field effect transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.