Field-effect transistor substantially consisting of organic materials
US7402834B2 · kind B2 · utility
1Cited by
4References
4Claims
0Family size
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Key dates
| Filing date | Jun 5, 2002 |
| Grant date | Jul 22, 2008 |
| Priority date | — |
| Expiry date | Feb 28, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/10
Abstract
An organic field-effect transistor is disclosed in which an insulating layer having a thickness of 0.3 m or less is provided on a substantially planar electrode layer. This transistor has a channel length down to 2 m, satisfying the condition for voltage amplification well below 10V, and has an on/off ratio of about 25.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.