Thin film resistor structure and method of fabricating a thin film resistor structure
US7403095B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Oct 4, 2005 |
| Grant date | Jul 22, 2008 |
| Priority date | — |
| Expiry date | Oct 4, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/4913
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin film resistor structure and a method of fabricating a thin film resistor structure is provided. The thin film resistor structure includes an electrical interface layer or head layer that is a combination of a Titanium (Ti) layer and a Titanium Nitride (TiN) layer. The combination of the Ti layer and the TiN layer mitigates resistance associated with the electrical interface layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.