Method for measuring hysteresis curve and anisotropic energy of magnetic memory unit
US7403414B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Sep 29, 2006 |
| Grant date | Jul 22, 2008 |
| Priority date | — |
| Expiry date | Feb 17, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for measuring hysteresis curves and anisotropic energy of magnetic memory units is disclosed. It comprises gradually applying different magnetic fields to a single-layer or a multilayer magnetic structure (such as a MRAM memory unit) by extra ordinary Hall effect, and recording the variation of the Hall voltage to obtain the hysteresis curve and anisotropic energy with specific instruments, and calculating the individual anisotropic energy value of the magnetic material of the single-layer or the multilayer magnetic structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.