Etching solution, etched article and method for etched article
US7404910B1 · kind B1 · utility
6Cited by
15References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 22, 1999 |
| Grant date | Jul 29, 2008 |
| Priority date | — |
| Expiry date | Nov 22, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An etching solution which contains hydrogen fluoride (HF) and exhibits an etching rate ratio: etching rate for a boron-glass film (BSG) or boron-phosphorus-glass film (BPSG)/etching rate for a thermally oxidized film (THOX) of 10 or more at 25° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.