Method for manufacturing resist pattern and method for manufacturing semiconductor device
US7405033B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2004 |
| Grant date | Jul 29, 2008 |
| Priority date | — |
| Expiry date | Sep 15, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
To provide a method for manufacturing a resist pattern designed to reduce a manufacturing cost by improving efficiency in the use of a resist material, a method for removing a resist pattern, and a method for manufacturing a semiconductor device.The present invention includes a step of forming a resist pattern by discharging a composition containing photosensitizer on a object to be processed under reduced pressure. The present invention includes a step of etching the object to be processed using the resist pattern as a mask, a step of irradiating the resist pattern through a photomask with light within a photosensitive wavelength region of a photosensitizer, and a step of removing the resist pattern on the object to be processed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.