Structure and method of forming electrodeposited contacts

US7405154B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Cyril Cabral, Jr. · Ossining, US
• Hariklia Deligianni · Alpine, US
• Randolph F. Knarr · Goldens Bridge, US
• Sandra G. Malhotra · San Jose, US
• Stephen M. Rossnagel · Pleasantville, US
• Xiaoyan Shao · Yorktown Heights, US
• Anna W. Topol · Jefferson Valley, US
• Philippe M. Vereecken · Liège, BE

Key dates

• Filing date: Mar 24, 2006
• Grant date: Jul 29, 2008
• Expiry date: Feb 27, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A contact metallurgy structure comprising a patterned dielectric layer having cavities on a substrate; a silicide or germanide layer such as of cobalt and/or nickel located at the bottom of cavities; a contact layer comprising Ti or Ti/TiN located on top of the dielectric layer and inside the cavities and making contact to the silicide or germanide layer on the bottom; a diffusion barrier layer located on top of the contact layer and inside the cavities; optionally a seed layer for plating located on top of the barrier layer; a metal fill layer in vias is provided along with a method of fabrication. The metal fill layer is electrodeposited with at least one member selected from the group consisting of copper, rhodium, ruthenium, iridium, molybdenum, gold, silver, nickel, cobalt, silver, gold, cadmium and zinc and alloys thereof. When the metal fill layer is rhodium, ruthenium, or iridium, an effective diffusion barrier layer is not required between the fill metal and the dielectric. When the barrier layer is platable, such as ruthenium, rhodium, platinum, or iridium, the seed layer is not required.