MEMS switch
US7405635B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2004 |
| Grant date | Jul 29, 2008 |
| Priority date | — |
| Expiry date | Dec 1, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01H2001/0078
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
It is to provide an MEMS switch easy to manufacture, microscopic, and capable of obtaining a sufficient ON/OFF capacitance change ratio.An MEMS switch includes a substrate 46, a conductive beam 42 formed on a surface of the substrate, and three-layer structure beams B1 and B2 formed on the surface of the substrate and disposed to be opposed to the conductive beam. The MEMS switch is characterized in that: each of the three-layer structure beams includes a first conductive layer 38, 40, a second conductive layer 30, 32 and a dielectric layer 34, 36 sandwiched between the first conductive layer and the second conductive layer; the first conductive layer is opposed to the conductive beam 42; at least one of the conductive beam 42 and the three-layer structure beams is displaced on a plane parallel to the substrate 46 due to an electrostatic force so that the conductive beam 42 and the first conductive layer 38, 40 can come into contact with each other; and a conductive path is formed between the conductive beam 42 and the second conductive layer 30, 32 when the conductive beam 42 and the first conductive layer are in contact with each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.