Method of writing data on a storage device using a probe technique
US7406020B2 · kind B2 · utility
2Cited by
3References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 7, 2004 |
| Grant date | Jul 29, 2008 |
| Priority date | — |
| Expiry date | Dec 5, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/0021
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of writing data on a storage device using a probe technique. In the method of writing data on a memory device including a resistive probe used for reading and writing of data, a ferroelectric writing medium on which data is written by the resistive probe, and a lower electrode disposed on a bottom surface of the ferroelectric writing medium, heat and an electric field are applied simultaneously to a domain of the ferroelectric writing medium, on which the data will be written, by applying a voltage to the resistive probe and the lower electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.