Chromium/titanium oxide semiconductor gas sensor and method for production thereof

US7406856B2 · kind B2 · utility

Assignee

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Harald Bottner · Glückstadt, DE
• Jurgen Wollenstein · Naumburg, DE
• Gerd Kuhner · Glückstadt, DE

Key dates

• Filing date: Sep 2, 2002
• Grant date: Aug 5, 2008
• Expiry date: Apr 19, 2025

Classification

• Technology area (CPC G): Physics
• CPC primary: G01N27/125
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A metal oxide semiconductor gas sensor and a method for production thereof. The sensor comprises a sensor-active metal oxide thin layer applied to a substrate, in contact with at least one electrode. The sensor-active metal oxide thin layer comprises a chromium/titanium oxide (CTO) layer with a thickness of about 10 nm to about 1 μm. The chromium and titantium layers are applied over each other using thin layer technology and are subsequently tempered.