Resist composition for electron beam or EUV
US7407734B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Oct 20, 2004 |
| Grant date | Aug 5, 2008 |
| Priority date | — |
| Expiry date | Nov 11, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/146
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist composition and a method of forming a resist pattern that enable contamination within the exposure apparatus to be prevented in lithography processes using an electron beam or EUV (extreme ultraviolet light). In this method, an organic solvent containing, as the principal component, one or more compounds selected from a group consisting of propylene glycol monomethyl ether (PGME), methyl amyl ketone (MAK), butyl acetate (BuOAc), and 3-methyl methoxy propionate (MMP) is used as the resist solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.