Polysilazane perhydride solution and method of manufacturing a semiconductor device using the same
US7407864B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2005 |
| Grant date | Aug 5, 2008 |
| Priority date | — |
| Expiry date | May 19, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02326
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of manufacturing a semiconductor device comprising forming an element isolation trench in a semiconductor substrate, coating a polysilazane perhydride solution on the semiconductor substrate having the element isolation trench formed thereon to form a polysilazane perhydride film, the polysilazane perhydride solution comprising dibutyl ether having a butanol concentration of 30 ppm or less, and polysilazane perhydride dissolved in the dibutyl ether, subjecting the polysilazane perhydride film to oxidation in an atmosphere containing water vapor to form a silicon dioxide film, and selectively removing the silicon dioxide film to leave the silicon dioxide film in the element isolation trench to form an element isolating insulation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.