Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition
US7407872B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2005 |
| Grant date | Aug 5, 2008 |
| Priority date | — |
| Expiry date | Nov 18, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/763
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. <1010> M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.